Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/69447
Type: Artigo de periódico
Title: In0.49Ga0.51P growth on pre-patterned GaAs substrates by chemical beam epitaxy
Author: de Castro, MPP
Frateschi, NC
Bettini, J
de Carvalho, MM
Abstract: We present a study on the growth of lattice-matched InGaP on patterned GaAs substrates by chemical beam epitaxy. An experimental analysis of the growth on planes [100] and [111]A as a function of growth temperature and pattern dimension is presented. A simple surface kinetics model is proposed allowing the determination of diffusion length, incorporation time and free species lifetime on both planes. Incorporation on planes [111]A reduces with increase in temperature and there is indication of a relationship between evaporation time and nucleation sites on [111]A planes (C) 1998 Elsevier Science B.V. All rights reserved.
Subject: patterned substrates
InGaP
surface kinetics
migration length
Country: Holanda
Editor: Elsevier Science Bv
Rights: fechado
Identifier DOI: 10.1016/S0022-0248(98)00506-5
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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