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|Type:||Artigo de periódico|
|Title:||Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si delta-doped GaAs/In0.15Ga0.85As/GaAs quantum well|
da Silva, ECF
|Abstract:||A systematic investigation of the transport properties of a GaAs/InGaAs quantum well electronically coupled to a silicon delta-doped layer was carried out as a function of the illumination time of the sample. Shubnikov-de Haas measurements allowed the determination of the quantum mobility of each occupied subband that could be accurately analyzed from the dark condition up to the continuous-illumination regime. The origin of the persistent-photoconductivity effect observed in the sample could be unambiguously determined and was confirmed by self-consistent calculations.|
|Editor:||American Physical Soc|
|Appears in Collections:||Artigos e Materiais de Revistas Científicas - Unicamp|
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