Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/69219
Type: Artigo de periódico
Title: Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si delta-doped GaAs/In0.15Ga0.85As/GaAs quantum well
Author: Cavalheiro, A
da Silva, ECF
Takahashi, EK
Quivy, AA
Leite, JR
Meneses, EA
Abstract: A systematic investigation of the transport properties of a GaAs/InGaAs quantum well electronically coupled to a silicon delta-doped layer was carried out as a function of the illumination time of the sample. Shubnikov-de Haas measurements allowed the determination of the quantum mobility of each occupied subband that could be accurately analyzed from the dark condition up to the continuous-illumination regime. The origin of the persistent-photoconductivity effect observed in the sample could be unambiguously determined and was confirmed by self-consistent calculations.
Country: EUA
Editor: American Physical Soc
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.65.075320
Date Issue: 2002
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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