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|Type:||Artigo de periódico|
|Title:||III-V semiconductor nanowire growth: does arsenic diffuse through the metal nanoparticle catalyst?|
|Abstract:||The synthesis of III-V semiconductor nanowires (NWs) is based on the delivery of atoms from a vapor phase to a catalytic metal nanoparticle (NP). Although there has been extensive work on such systems, the incorporation pathways of group V atoms remain an open issue. Here, we have performed a detailed structural and chemical analysis of the catalyst NP in NWs where we switch the V atomic element during growth (heterostructured InP/InAs/InP NWs). Our experimental results indicate a group V pathway where these atoms actually diffuse through the catalytic NP by formation of a stable phase containing As under growth conditions. We have observed distinct NW growth behavior within a narrow temperature range (30 degrees C) suggesting a transition between vapor-liquid-solid and vapor- solid-solid growth modes.|
|Editor:||Iop Publishing Ltd|
|Citation:||Nanotechnology. Iop Publishing Ltd, v. 20, n. 27, 2009.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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