Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/69029
Type: Artigo de periódico
Title: Hydrostatic-pressure effects on the correlated electron-hole transition energies in GaAs-Ga1-xAlxAs semiconductor quantum wells
Author: Raigoza, N
Duque, CA
Reyes-Gomez, E
Oliveira, LE
Abstract: The effects of hydrostatic pressure on the correlated e-h transition energies in single GaAs-Ga1-xAlxAs quantum wells are calculated via a variational procedure, in the framework of the effective-mass and nondegenerate parabolic-band approximations. The valence-band anisotropy is included in our theoretical model by using different hole masses in different spatial directions. Both heavy- and light-hole exciton energies are obtained, and correlated e-h transition energies are found in good agreement with available experimental measurements. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Country: Alemanha
Editor: Wiley-v C H Verlag Gmbh
Rights: fechado
Identifier DOI: 10.1002/pssb.200541303
Date Issue: 2006
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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