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|Type:||Artigo de periódico|
|Title:||Hydrostatic-pressure effects on the correlated electron-hole transition energies in GaAs-Ga1-xAlxAs semiconductor quantum wells|
|Abstract:||The effects of hydrostatic pressure on the correlated e-h transition energies in single GaAs-Ga1-xAlxAs quantum wells are calculated via a variational procedure, in the framework of the effective-mass and nondegenerate parabolic-band approximations. The valence-band anisotropy is included in our theoretical model by using different hole masses in different spatial directions. Both heavy- and light-hole exciton energies are obtained, and correlated e-h transition energies are found in good agreement with available experimental measurements. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.|
|Editor:||Wiley-v C H Verlag Gmbh|
|Citation:||Physica Status Solidi B-basic Solid State Physics. Wiley-v C H Verlag Gmbh, v. 243, n. 3, n. 635, n. 640, 2006.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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