Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/68738
Type: Artigo de periódico
Title: On the optical properties of InAs/InP systems: The role of two-dimensional structures and three-dimensional islands
Author: Mendonca, CAC
Laureto, E
Brasil, MJSP
Cotta, MA
Carvalho, MMG
Meneses, EA
Abstract: We investigate the effects of the interface morphology on the electronic properties of InAs/In systems using in-air atomic force microscopy and low temperature photoluminescence. Atomic force microscopy results show that the distribution of InAs strained film into three-dimensional islands and the two-dimensional wetting layer-typical of the Stranski-Krastanov growth mode-is strongly affected by the characteristics of the substrate and by the morphology of the InP buffer layer. The differences in the optical data are correlated to the different interface characteristics observed by atomic force microscopy. We discuss the origin of emission peaks taking into account the diffusion process of adsorbed atoms on the different types of surface. (C) 1998 American Institute of Physics.
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Date Issue: 1998
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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