Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/68737
Type: Artigo de periódico
Title: On the onset of InAs islanding on InP: influence of surface steps
Author: Cotta, MA
Mendonca, CAC
Meneses, EA
deCarvalho, MMG
Abstract: We investigate the transition from two- to three-dimensional growth of thin InAs films on InP by chemical beam epitaxy. This transition is shown to strongly depend on growth temperature and on the misorientation-or the presence of surface steps - on the InP surface where the InAs film is deposited. Low temperature photoluminescence measurements on InP-InAs-InP quantum well structures and atomic force microscopy analysis of InAs-InP structures indicate different islanding behaviors for substrates with different misorientations, the onset of islanding process occurring earlier for misoriented than for nominal substrates. The shape and distribution of the islands indicate the existence of a step edge barrier altering the diffusion dynamics on the surface. Low growth temperature is shown to delay islanding for a fixed deposition time and also limit island formation to certain regions of the sample where smooth corrugations (slope similar to 1 degrees) are observed. (C) 1997 Elsevier Science B.V.
Subject: atomic force microscopy
epitaxy
indium arsenide
indium phosphide
morphology
photoluminescence
roughness and topography
semiconducting films
surface diffusion
surface structure
Country: Holanda
Editor: Elsevier Science Bv
Rights: fechado
Identifier DOI: 10.1016/S0039-6028(97)00377-4
Date Issue: 1997
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

Files in This Item:
File Description SizeFormat 
WOSA1997YD09600016.pdf490.97 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.