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|Type:||Artigo de periódico|
|Title:||ON THE DOPING EFFICIENCY OF NITROGEN IN HYDROGENATED AMORPHOUS-GERMANIUM|
|Abstract:||This letter reports on the doping efficiency of nitrogen in a-Ge:H films of electronic quality. It has been found that nitrogen is an effective dopant in the a-Ge:H network, its doping efficiency being similar to the one corresponding to phosphorus in a-Si:H. The concentration of active nitrogen atoms decreases with impurity content following a square root dependence on total nitrogen. This behavior is similar to the one determined for column V dopants in a-Si:H films of electronic quality.|
|Editor:||Amer Inst Physics|
|Citation:||Applied Physics Letters. Amer Inst Physics, v. 62, n. 1, n. 58, n. 60, 1993.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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