Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/68549
Type: Artigo
Title: Hafnium silicide formation on Si(100) upon annealing
Author: Siervo, A. de
Flüchter, C. R.
Weier, D.
Schürmann, M.
Dreiner, S.
Westphal, C.
Carazzolle, M. F.
Pancotti, A.
Landers, R.
Kleiman, G. G.
Abstract: High dielectric constant materials, such as HfO2, have been extensively studied as alternatives to SiO2 in new generations of Si based devices. Hf silicate/silicide formation has been reported in almost all literature studies of Hf based oxides on Si, using different methods of preparation. A silicate interface resembles close to the traditional Si/SiO2. The silicate very likely forms a very sharp interface between the Si substrate and the metal oxide, and would be suitable for device applications. However, the thermal instability of the interfacial silicate/oxide film leads to silicidation, causing a dramatic loss of the gate oxide integrity. Despite the importance of the Hf silicide surface and interface with Si, only a few studies of this surface are present in the literature, and a structural determination of the surface has not been reported. This paper reports a study of the Hf silicide formation upon annealing by using a combination of XPS, LEED, and x-ray photoelectron diffraction (XPD) analyses. Our results clearly indicate the formation of a unique ordered Hf silicide phase (HfSi2), which starts to crystallize when the annealing temperature is higher than 550 °C.
High dielectric constant materials, such as HfO2, have been extensively studied as alternatives to SiO2 in new generations of Si based devices. Hf silicate/silicide formation has been reported in almost all literature studies of Hf based oxides on Si, using different methods of preparation. A silicate interface resembles close to the traditional Si/SiO2. The silicate very likely forms a very sharp interface between the Si substrate and the metal oxide, and would be suitable for device applications. However, the thermal instability of the interfacial silicate/oxide film leads to silicidation, causing a dramatic loss of the gate oxide integrity. Despite the importance of the Hf silicide surface and interface with Si, only a few studies of this surface are present in the literature, and a structural determination of the surface has not been reported. This paper reports a study of the Hf silicide formation upon annealing by using a combination of XPS, LEED, and x-ray photoelectron diffraction (XPD) analyses. Our results clearly indicate the formation of a unique ordered Hf silicide phase (HfSi2), which starts to crystallize when the annealing temperature is higher than 550 °C.
Subject: Óxido de háfnio
Espectroscopia fotoeletrônica de raio X
Country: Estados Unidos
Editor: American Physical Society
Citation: Physical Review B. American Physical Soc, v. 74, n. 7, 2006.
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.075319
Address: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.74.075319
Date Issue: 2006
Appears in Collections:IFGW - Artigos e Outros Documentos

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