Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/68481
Type: Artigo de periódico
Title: Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate
Author: Pacheco-Salazar, DG
Li, SF
Cerdeira, F
Meneses, EA
Leite, JR
Scolfaro, LMR
As, DJ
Lischka, K
Abstract: We report on the growth and characterization of cubic InGaN epilayers on two different types of substrates: GaAs (0 0 1) and 3C-SiC (0 0 1). The films are grown by RF plasma-assisted molecular beam epitaxy (MBE). The crystalline quality and state of stress in these films were assessed by performing Raman scattering and X-ray diffraction experiments. Both types of measurements complement one another as techniques to determine crystalline quality and the state of biaxial strain present in the alloy layers. Our experiments show that, for the same In molar fraction, samples deposited on SiC Substrates are more uniformly strained and have better crystallinity than those deposited on GaAs Substrates. (c) 2005 Elsevier B.V. All rights reserved.
Subject: crystalline quality
Raman scattering
X-ray diffraction
Country: Holanda
Editor: Elsevier Science Bv
Rights: fechado
Identifier DOI: 10.1016/j.jcrysgro.2005.07.049
Date Issue: 2005
Appears in Collections:Unicamp - Artigos e Outros Documentos

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