Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/68219
Type: Artigo de periódico
Title: Helium ion irradiation of polymer films deposited from TMS-Ar plasmas
Author: Gelamo, RV
Durrant, SF
Trasferetti, BC
Davanzo, CU
Rouxinol, FPM
de Moraes, MAB
Abstract: Polymer films synthesized from plasmas of a tetramethylsilane - Ar mixture were modified by irradiation with 170 keV He ions at fluences ranging from 1 x 10(14) to 1 x 10(16) cm(-2). As revealed by infrared spectroscopy, the ion beam produced intense bond rearrangements, such as the depletion of bonding groups (C-H and Si-H), and induced the formation of new ones, such as O-H and Si-O. From the nanoindentation measurements, a remarkable increase in the surface hardness of the films was observed as the ion fluence was increased. The increases in hardness were accompanied by an increase in the film compaction as shown by using a combination of RBS and film thickness measurements. From both hardness and infrared measurements A was concluded that, under the He ion bombardment, the polymer structure is transformed into a silicon oxycarbide network.
Subject: hardness
infrared reflection-absorption spectroscopy (IRRAS)
ion irradiation
plasma polymerization
Rutherford backscattering spectroscopy (RBS)
tetramethylsilane
Country: Alemanha
Editor: Wiley-v C H Verlag Gmbh
Rights: fechado
Identifier DOI: 10.1002/ppap.200600200
Date Issue: 2007
Appears in Collections:Unicamp - Artigos e Outros Documentos

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