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Type: Artigo de periódico
Title: GaN nano- and micro-spheres fabricated selectively on silicon
Author: Barea, LAM
von Zuben, AAG
Marquez, AZ
Frateschi, NC
Abstract: This work presents the selective growth of three-dimensional metallic gallium nitride structures on silicon substrates by chemical beam epitaxy (CBE) with a subsequent plasma nitridation process. The use of titanium pre-deposited stripes over silicon (100) is shown to provide high selectivity where spherical and semi-spherical structures are obtained only over the metal. These structures have diameters ranging from 100 nm to 3 mu m depending on the growth conditions. The nitridation process was performed on an electron cyclotron resonance (ECR) plasma system. Raman micro-spectroscopy results showed GaN formation with zinc blend crystal structure and photoluminescence emission in the visible spectrum in a range between 350 and 650 nm. (C) 2007 Elsevier B.V. All rights reserved.
Subject: nano-structures
chemical beam epitaxy
gallium compounds
semiconducting gallium compounds
semiconducting III-V materials
semiconducting materials
Country: Holanda
Editor: Elsevier Science Bv
Citation: Journal Of Crystal Growth. Elsevier Science Bv, v. 308, n. 1, n. 37, n. 40, 2007.
Rights: fechado
Identifier DOI: 10.1016/j.jcrysgro.2007.07.052
Date Issue: 2007
Appears in Collections:Unicamp - Artigos e Outros Documentos

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