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Type: Artigo de periódico
Title: Ohmic contacts formation on n-InP
Author: Morais, J
Fazan, TA
Landers, R
Sato, EAS
Abstract: We have investigated the correlation between contact resistance, heat treatment, and micro structure in ohmic contacts on n-InP. The samples consisted of three different structures: 50 nm-Ni/200 nm-AuGe/n-InP, Au/100 nm-Pt/100 nm-Ti/50 nm-Ni/n-InP, and 200 nm-Au/100 nm-Pt/100 nm-Ti/50 nm-Ni/200 nm-AuGe/n-InP. After annealing the samples; depth profiles obtained by Auger electron spectroscopy and ion sputtering showed a tendency of the Ge to migrate from the Au-Ge alloy towards the Ni layer, as well as an accumulation of Ni at the semiconductor interface. A Ni-P phase is identified as being responsible for the ohmic character of the metal/InP interface. Specific contact resistivities were measured for the three different types of metallizations. We observed that the resistivity is sensitive to the annealing temperature and related to the amount of Ni at the metal/InP interface. The use of overlayers is suggested to avoid migration of the semiconductor components towards the contact surface. (C) 1996 American Institute of Physics.
Country: EUA
Editor: Amer Inst Physics
Citation: Journal Of Applied Physics. Amer Inst Physics, v. 79, n. 9, n. 7058, n. 7061, 1996.
Rights: aberto
Identifier DOI: 10.1063/1.362655
Date Issue: 1996
Appears in Collections:Unicamp - Artigos e Outros Documentos

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