Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Ohmic contacts formation on n-InP|
|Abstract:||We have investigated the correlation between contact resistance, heat treatment, and micro structure in ohmic contacts on n-InP. The samples consisted of three different structures: 50 nm-Ni/200 nm-AuGe/n-InP, Au/100 nm-Pt/100 nm-Ti/50 nm-Ni/n-InP, and 200 nm-Au/100 nm-Pt/100 nm-Ti/50 nm-Ni/200 nm-AuGe/n-InP. After annealing the samples; depth profiles obtained by Auger electron spectroscopy and ion sputtering showed a tendency of the Ge to migrate from the Au-Ge alloy towards the Ni layer, as well as an accumulation of Ni at the semiconductor interface. A Ni-P phase is identified as being responsible for the ohmic character of the metal/InP interface. Specific contact resistivities were measured for the three different types of metallizations. We observed that the resistivity is sensitive to the annealing temperature and related to the amount of Ni at the metal/InP interface. The use of overlayers is suggested to avoid migration of the semiconductor components towards the contact surface. (C) 1996 American Institute of Physics.|
|Editor:||Amer Inst Physics|
|Citation:||Journal Of Applied Physics. Amer Inst Physics, v. 79, n. 9, n. 7058, n. 7061, 1996.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.