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Type: Artigo de periódico
Title: Fractional-dimensional approach for excitons in GaAs-Ga1-xAlxAs quantum wells
Author: Matos-Abiague, A
Oliveira, LE
de Dios-Leyva, M
Abstract: The fractional-dimensional approach, in which the real semiconductor heterostructure system is substituted by an effective isotropic environment with a fractional dimension, was used in the study of ground and excited excitonic states in GaAs-(Ga,Al)As quantum wells. The fractional-dimensional formalism was extended to include the possibility of dealing with excited states and varying effective masses across the heterostructure interfaces, with the fractional dimension chosen in a systematic way. Theoretical fractional-dimensional results for ground-state Is-like exciton states in GaAs-(Ga,Al)As quantum wells were shown to be in good agreement with previous detailed calculations and recent experimental measurements. Moreover, theoretical results within the fractional-dimensional scheme were found in excellent agreement with the recent experimental high-resolution spectroscopic studies on excited-exciton states of shallow GaAs-Ga1-xAlxAs quantum wells with Al concentration in the range of 1-4.5 %.
Country: EUA
Editor: American Physical Soc
Citation: Physical Review B. American Physical Soc, v. 58, n. 7, n. 4072, n. 4076, 1998.
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.58.4072
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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