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|Type:||Artigo de periódico|
|Title:||Formation of a SiC buffer layer by reaction of Si (100) with methane and hydrogen plasma|
|Abstract:||The reaction of Si (100) surfaces at T = 950 degrees C with radicals of methane obtained in a low-power-density glow discharge plasma, has been studied by combining in situ surface science techniques (x-ray photoemission spectroscopy and high electron energy diffraction) and ex situ analytical techniques (atomic force microscopy and infrared absorption). An analysis of C 1s and Si 2p core-level shifts combined with the examination of the valence-band curves showed that the obtained buffer layers were stoichiometric. For long carbonization times (>30 min) the formation of a carbon rich surface was observed. To understand the mechanism of hetero-epitaxial silicon carbide (SiC) buffer layer growth, the early stage of SiC nucleation was observed by atomic force microscopy and reflection high-energy electron diffraction. The results suggest that three-dimensional epitaxial islands nucleate at the earliest growth stage followed by a further Volmer-Weber growth until the formation of a carbon rich surface. The growth mechanism of the SiC buffer layer is discussed on the basis of a reported model.|
|Editor:||Iop Publishing Ltd|
|Citation:||Journal Of Physics D-applied Physics. Iop Publishing Ltd, v. 32, n. 19, n. 2478, n. 2482, 1999.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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