Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/66924
Type: Artigo de periódico
Title: Field effect on the impact ionization rate in semiconductors
Author: Redmer, R
Madureira, JR
Fitzer, N
Goodnick, SM
Schattke, W
Scholl, E
Abstract: Impact ionization plays a crucial role for electron transport in semiconductors at high electric fields. We derive appropriate quantum kinetic equations for electron transport in semiconductors within linear response theory. The field-dependent collision integral is evaluated for the process of impact ionization. A known, essentially analytical result is reproduced within the parabolic band approximation [W. Quade , Phys. Rev. B 50, 7398 (1994)]. Based on the numerical results for zero field strengths but realistic band structures, a fit formula is proposed for the respective field-dependent impact ionization rate. Explicit results are given for GaAs, Si, GaN, ZnS, and SrS. (C) 2000 American Institute of Physics. [S0021-8979(00)03002-4].
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.371941
Date Issue: 2000
Appears in Collections:Unicamp - Artigos e Outros Documentos

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