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|Type:||Artigo de periódico|
|Title:||Field effect on the impact ionization rate in semiconductors|
|Abstract:||Impact ionization plays a crucial role for electron transport in semiconductors at high electric fields. We derive appropriate quantum kinetic equations for electron transport in semiconductors within linear response theory. The field-dependent collision integral is evaluated for the process of impact ionization. A known, essentially analytical result is reproduced within the parabolic band approximation [W. Quade , Phys. Rev. B 50, 7398 (1994)]. Based on the numerical results for zero field strengths but realistic band structures, a fit formula is proposed for the respective field-dependent impact ionization rate. Explicit results are given for GaAs, Si, GaN, ZnS, and SrS. (C) 2000 American Institute of Physics. [S0021-8979(00)03002-4].|
|Editor:||Amer Inst Physics|
|Citation:||Journal Of Applied Physics. Amer Inst Physics, v. 87, n. 2, n. 781, n. 788, 2000.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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