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Type: Artigo de periódico
Title: Ferroelectricity in a quasiamorphous ultrathin BaTiO3 film
Author: Wang, JL
Pancotti, A
Jegou, P
Niu, G
Gautier, B
Mi, YY
Tortech, L
Yin, S
Vilquin, B
Barrett, N
Abstract: Until now, the quasiamorphous (QA) phase in BaTiO3 (BTO), SrTiO3 (STO), and BaZrO3 was achieved by pulling a thick film through a steep temperature gradient. Here, we show that a room-temperature deposited ultrathin film, subsequently annealed in O-2 can also produce a QA phase. The atomic, electronic, and ferroelectric (FE) structure of a QA, ultrathin BTO grown on STO were studied by x-ray diffraction (XRD), x-ray photoelectron diffraction (XPD), x-ray photoelectron spectroscopy (XPS), and piezoforce microscopy (PFM). The absence of long-range order is confirmed by in-and out-of-plane XRD as well as Ti 2p XPD. FE polarized domains with good retention have been successfully written into the QA film and exhibit a clear P-E hysteresis loop. Substrate clamping frustrates volume expansion during annealing leading to a QA film. Photoelectron spectroscopy confirms a similar overall electronic structure as for thicker films but with some significant differences. Simple charge-transfer arguments are not sufficient to explain the high-resolution core-level spectra. Ba, Ti, and O all show components associated with a surface region. We suggest that the observation of such a component in the Ti 2p spectrum is linked with the high dynamic charge tensor induced by the large off-center displacement of the Ti ion.
Country: EUA
Editor: Amer Physical Soc
Citation: Physical Review B. Amer Physical Soc, v. 84, n. 20, 2011.
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.84.205426
Date Issue: 2011
Appears in Collections:Unicamp - Artigos e Outros Documentos

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