Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/66639
Type: Artigo de periódico
Title: Fabrication of high-aspect ratio silicon nanopillars and nanocones using deep reactive ion etching
Author: Fischer, C
Menezes, JW
Moshkalev, SA
Verissimo, C
Vaz, AR
Swart, JW
Abstract: Bosch type processes have been employed to fabricate nanostructured Si surfaces. Nanopillars and nanocones in Si have been fabricated using different techniques for Ni micromasking. Plasma redeposition of Ni was found to be responsible for Si pillar formation with diameters varying in the submicron range. A possibility to produce tilted nanopillars with tilt angles up to as high as 25 degrees has been demonstrated. In other method, previously deposited and annealed thin Ni films were employed. Smaller Ni nanoislands were obtained, and the formation of Si nanocones was demonstrated using longer passivation steps. In this case, reflection coefficients as low as 1.2% were obtained for the optimized etching process time.
Subject: elemental semiconductors
metallic thin films
nanofabrication
nanostructured materials
nickel
passivation
reflectivity
silicon
sputter etching
Country: EUA
Editor: A V S Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1116/1.3246359
Date Issue: 2009
Appears in Collections:Unicamp - Artigos e Outros Documentos

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