Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/66633
Type: Artigo de periódico
Title: Fabrication and electrical performance of high-density arrays of nanometric silicon tips
Author: Carvalho, EJ
Alves, MAR
Braga, ES
Cescato, L
Abstract: We propose and demonstrate a simple and low cost process for the fabrication of large area arrays of nanometric silicon tips, for use as Field Emission Devices (FEDs). The process combines Interference Lithography (IL) with isotropic Reactive Ion Etching (RIE). Si tips with typical curvature radius of 20 nm and height of 900 nm were recorded with a periodicity of 1 mu m (density of 10(6) tips/mm(2)) covering a Silicon wafer of 2 in. The measurement of the electrical performance of the arrays demonstrates the feasibility of the association of these two techniques for recording Field Emission Tips. (C) 2010 Elsevier B.V. All rights reserved.
Subject: Interference Lithography
Reactive Ion Etching (RIE)
Silicon tips
Field Emission Devices
Country: Holanda
Editor: Elsevier Science Bv
Rights: fechado
Identifier DOI: 10.1016/j.mee.2010.06.046
Date Issue: 2010
Appears in Collections:Unicamp - Artigos e Outros Documentos

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