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|Type:||Artigo de periódico|
|Title:||Exponential absorption edge and disorder in Column IV amorphous semiconductors|
|Abstract:||We discuss the likely origin of the exponential absorption tail, or Urbach edge, of fourfold coordinated amorphous (a-)semiconductors. The present analysis is based on a compilation of a considerable amount of experimental data originating from a great variety of sample, alloys, and authors and obtained with quite different spectroscopic techniques. An attempt is made to correlate the measured Urbach edge with the structural and optical properties of the samples, The present analysis indicates that the Urbach edge may not only reflect the shape of the joint density of states of the valence and conduction band tails, but may also have important contributions from short-range order potential fluctuations produced by charged defects or impurities. (C) 1998 American Institute of Physics. [S0021-8979(98)02921-1].|
|Editor:||Amer Inst Physics|
|Citation:||Journal Of Applied Physics. Amer Inst Physics, v. 84, n. 9, n. 5184, n. 5190, 1998.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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