Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Excitonic wavefunction engineering based on type II quantum dots
Author: Dacal, LCO
Iikawa, F
Brasil, MJSP
Abstract: We propose a semiconductor heterostructure that allows an effective control of the shape of the carriers wavefunctions by varying just one main structural parameter. The structure is formed by a type II quantum dot and a type I quantum well. We present the results of calculations for a particular system consisting of an InP/GaAs quantum dot and an InGaAs/GaAs quantum well using a simple effective mass model that provides a good insight on our structure. We show that the wavefunction of the carrier that remains outside the dot changes from a spheroidal to a ring-like shape depending mainly on the separation between the well and the dot layers. This change has a significant impact on relevant excitonic properties such as its lifetime and electrical dipole, and it also determines the possibility of observing the optical Aharonov-Bohm effect. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Subject: excitonic properties
indirect excitons
quantum dots
Country: Alemanha
Editor: Wiley-v C H Verlag Gmbh
Citation: Physica Status Solidi B-basic Solid State Physics. Wiley-v C H Verlag Gmbh, v. 250, n. 10, n. 2174, n. 2179, 2013.
Rights: fechado
Identifier DOI: 10.1002/pssb.201349063
Date Issue: 2013
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.