Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/66261
Type: Artigo de periódico
Title: Exciton g factor of type-II InP/GaAs single quantum dots
Author: de Godoy, MPF
Gomes, PF
Nakaema, MKK
Iikawa, F
Brasil, MJSP
Caetano, RA
Madureira, JR
Bortoleto, JRR
Cotta, MA
Ribeiro, E
Marques, GE
Bittencourt, ACR
Abstract: We investigated the magneto-optical properties of type-II InP/GaAs quantum dots using single-dot spectroscopy. The emission energy from individual dots presents a quadratic diamagnetic shift and a linear Zeeman splitting as a function of magnetic fields up to 10 T, as previously observed for type-I systems. We analyzed the in-plane localization of the carriers using the diamagnetic shift results. The values for the exciton g factor obtained for a large number of a InP/GaAs dots are mainly constant, independent of the emission energy, and therefore, of the quantum dot dimensions. The result is attributed to the weak confinement of the holes in type-II InP/GaAs quantum dots.
Country: EUA
Editor: Amer Physical Soc
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.73.033309
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

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