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Type: Artigo de periódico
Title: Exceptionally Narrow-Band Quantum Dot Infrared Photodetector
Author: Alvarenga, DR
Parra-Murillo, CA
Kawabata, RMS
Guimaraes, PSS
Unterrainer, K
Pires, MP
Vieira, GS
Villas-Boas, JM
Maialle, MZ
Degani, MH
Farinas, PF
Studart, N
Souza, PL
Abstract: InGaAlAs/InGaAs/InGaAlAs/InAs/InP quantum-dot structures have been investigated for the development of infrared photodetectors capable of generating photocurrent peaks exceptionally narrow for sharp wavelength discrimination. Our specially designed structure displays a photocurrent peak at 12 mu m with a full width at half maximum, limited by inhomogeneous broadening, of only 4.5 meV. In agreement with two independent energy level calculations, we attribute this peak to photon absorption between InAs quantum dot bound states, followed by a three step carrier extraction mechanism in which the coupling to the adjacent InGaAs quantum well is a key feature. The possible role played by intraband Auger scattering, multiphoton sequential absorption and tunneling in generating the observed current peak is also addressed.
Subject: InGaAs/InGaAlAs/InAs/InP structure
narrow-band detector
quantum dot infrared photodetector (QDIP)
Country: EUA
Editor: Ieee-inst Electrical Electronics Engineers Inc
Citation: Ieee Journal Of Quantum Electronics. Ieee-inst Electrical Electronics Engineers Inc, v. 48, n. 10, n. 1360, n. 1366, 2012.
Rights: fechado
Identifier DOI: 10.1109/JQE.2012.2210539
Date Issue: 2012
Appears in Collections:Unicamp - Artigos e Outros Documentos

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