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|Type:||Artigo de periódico|
|Title:||Evidence of formation of Si-C bonds during growth of Si-doped III-V semiconductor compounds|
de Carvalho, MMG
|Abstract:||In this work, we demonstrate that Si-C bonds are formed in III-V semiconductor compounds grown by chemical beam epitaxy. Our results suggest that the formation of Si-C bonds occurs in III-V epitaxial layers with acceptor Carbon residual concentration and high Si concentrations (>10(17) cm(-3)). The main consequence of Si-C bonds is the generation of defects along  direction. These defects produce carrier concentration saturation, reduction of electrical mobility, crystal quality degradation, and surface defects. (C) 2005 American Institute of Physics.|
|Editor:||Amer Inst Physics|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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