Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/66100
Type: Artigo de periódico
Title: Evidence of formation of Si-C bonds during growth of Si-doped III-V semiconductor compounds
Author: Bettini, J
de Carvalho, MMG
Abstract: In this work, we demonstrate that Si-C bonds are formed in III-V semiconductor compounds grown by chemical beam epitaxy. Our results suggest that the formation of Si-C bonds occurs in III-V epitaxial layers with acceptor Carbon residual concentration and high Si concentrations (>10(17) cm(-3)). The main consequence of Si-C bonds is the generation of defects along [111] direction. These defects produce carrier concentration saturation, reduction of electrical mobility, crystal quality degradation, and surface defects. (C) 2005 American Institute of Physics.
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.1905783
Date Issue: 2005
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000228901600058.pdf650.26 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.