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|Type:||Artigo de periódico|
|Title:||Evidence of Be3P2 formation during growth of Be-doped phosphorus-based semiconductor compounds|
|Author:||de Carvalho, MMG|
|Abstract:||In this work, we present evidence that Be3P2 microcrystals are formed in Be-doped phosphorus-based semiconductor compounds grown by chemical beam epitaxy. Our results suggest that microcrystal formation occurs when high Be concentrations (> 10(18) cm(-3)) and temperatures higher than 500 degrees C are used for crystal growth. The main consequence of Be3P2 formation is a high phosphorus consumption close to these microcrystals that causes a large density of P vacancies in the semiconductor layer. This results in reduced electrical mobility, lattice parameter reduction, and poor crystalinity of the film in general. (c) 1999 American Institute of Physics. [S0003-6951(99)01624-1].|
|Editor:||Amer Inst Physics|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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