Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/65673
Type: Artigo de periódico
Title: ETCHING TECHNIQUE FOR TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF NANOSTRUCTURE OF VISIBLE LUMINESCENT POROUS SILICON
Author: TESCHKE, O
GONCALVES, MC
GALEMBECK, F
Abstract: We present a special configuration for the electrochemical etching of silicon, in which thin samples suitable for direct transmission electron microscopy observation are produced. This technique allows the observation of images of an irregular matrix of pores and individual columnlike structures with a approximately 15 angstrom cross-sectional diameter. These images show that the preferential etching directions are the projections of the {100} planes on the (111) plane for the etched [111]-oriented silicon. The large pore ( > 50 nm diam) axis orientation is independent of the preferential etching direction and is parallel to the etching current direction.
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.109673
Date Issue: 1993
Appears in Collections:Unicamp - Artigos e Outros Documentos

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