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|Type:||Artigo de periódico|
|Title:||Erbium in a-Si : H|
|Abstract:||A review of the current status of research on Er3+ doped hydrogenated amorphous silicon (a-Si:H) is presented. Er has been introduced in a-Si:H and a-SiOx:H by ion implantation, co-sputtering and PECVD. In all cases, the characteristic atomic-like intra-4f I-4(13/2) --> I-4(15/2) photoluminescence emission at similar to 1.54 mu m is observed at room temperature. The Er3+ luminescence probability is determined by the local neighborhood of the ions. Therefore, local probes like EXAFS and Mossbauer spectroscopy have yielded very important information. A discussion of excitation processes, electroluminescence, and electronic doping effects, is also presented.|
|Editor:||Sociedade Brasileira Fisica|
|Citation:||Brazilian Journal Of Physics. Sociedade Brasileira Fisica, v. 29, n. 4, n. 616, n. 622, 1999.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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