Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/65467
Type: Artigo de periódico
Title: Electric-field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices
Author: de Carvalho, HB
Brasil, MJSP
Lopez-Richard, V
Gobato, YG
Marques, GE
Camps, I
Dacal, LCO
Henini, M
Eaves, L
Hill, G
Abstract: We report electric-field-induced modulation of the spin splitting during the charging and discharging processes of a p-type GaAs/AlAs double-barrier resonant-tunneling diode under an applied bias and magnetic field. In addition to the conventional Zeeman effect, we find experimental evidence of excitonic spin splitting produced by a combination of the Rashba spin-orbit interaction, the Stark effect, and the charge accumulation. The abrupt changes in the photoluminescence with the applied bias provide information about charge accumulation effects in the device.
Country: EUA
Editor: Amer Physical Soc
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.74.041305
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

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