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|Type:||Artigo de periódico|
|Title:||Electric-field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices|
|Author:||de Carvalho, HB|
|Abstract:||We report electric-field-induced modulation of the spin splitting during the charging and discharging processes of a p-type GaAs/AlAs double-barrier resonant-tunneling diode under an applied bias and magnetic field. In addition to the conventional Zeeman effect, we find experimental evidence of excitonic spin splitting produced by a combination of the Rashba spin-orbit interaction, the Stark effect, and the charge accumulation. The abrupt changes in the photoluminescence with the applied bias provide information about charge accumulation effects in the device.|
|Editor:||Amer Physical Soc|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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