Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/65458
Type: Artigo de periódico
Title: ELECTRICAL-CONDUCTIVITY OF AMORPHOUS-SILICON DOPED WITH RARE-EARTH ELEMENTS
Author: CASTILHO, JH
CHAMBOULEYRON, I
MARQUES, FC
RETTORI, C
ALVAREZ, F
Abstract: This work reports on the electrical properties of a-Si samples doped with elements of the lanthanide series. A detailed study of gadolinium-doped a-Si is presented. It has been found that the introduction of rare-earth elements into the amorphous-silicon network produces large changes in the conductivity. An analysis of the experimental conductivity as a function of temperature and rare-earth content, together with the optical and electron-spin-resonance data, leads us to suggest that rare-earth-acceptor-like states located in the lower half of the pseudogap may be responsible for the measured properties.
Country: EUA
Editor: American Physical Soc
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.43.8946
Date Issue: 1991
Appears in Collections:Unicamp - Artigos e Outros Documentos

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