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|Type:||Artigo de periódico|
|Title:||ELECTRICAL-CONDUCTIVITY OF AMORPHOUS-SILICON DOPED WITH RARE-EARTH ELEMENTS|
|Abstract:||This work reports on the electrical properties of a-Si samples doped with elements of the lanthanide series. A detailed study of gadolinium-doped a-Si is presented. It has been found that the introduction of rare-earth elements into the amorphous-silicon network produces large changes in the conductivity. An analysis of the experimental conductivity as a function of temperature and rare-earth content, together with the optical and electron-spin-resonance data, leads us to suggest that rare-earth-acceptor-like states located in the lower half of the pseudogap may be responsible for the measured properties.|
|Editor:||American Physical Soc|
|Citation:||Physical Review B. American Physical Soc, v. 43, n. 11, n. 8946, n. 8950, 1991.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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