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dc.contributor.CRUESPUniversidade Estadual de Campinaspt_BR
dc.typeArtigo de periódicopt_BR
dc.titleElectrical properties of diamond films prepared from carbon disulfide and ethanol in hydrogenpt_BR
dc.contributor.authorSampaio, MApt_BR
dc.contributor.authorPeterlevitz, ACpt_BR
dc.contributor.authorCeragioli, HJpt_BR
dc.contributor.authorCorrea, WLApt_BR
dc.contributor.authorDamiani, Fpt_BR
dc.contributor.authorChiquito, AJpt_BR
dc.contributor.authorDiagonel, Ept_BR
dc.contributor.authorBaranauskas, Vpt_BR
unicamp.author.emailvitor@dsif.fee.unicamp.brpt_BR
unicamp.authorSampaio, Marcio Augusto Peterlevitz, Alfredo Carlos Ceragioli, Helder Jose Alves Correa, Washington Luiz Damiani, Furio Baranauskas, Vitor Univ Estadual Campinas, Fac Engn Eletr & Computacao, Dept Semicond Instrumentos & Foton, UNICAMP, BR-13083852 Sao Paulo, Brazilpt_BR
unicamp.authorChiquito, Adenilson Jose Diagonel, Edgar Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Paulo, Brazilpt_BR
dc.subjectSulfur doped diamondpt_BR
dc.subjectCarbon disulfidept_BR
dc.subjectDoped CVD-diamondpt_BR
dc.subjectp-type diamondpt_BR
dc.subject.wosChemical-vapor-depositionpt_BR
dc.subject.wosDoped Polycrystalline Diamondpt_BR
dc.subject.wosSulfurpt_BR
dc.subject.wosPhosphoruspt_BR
dc.subject.wosGrowthpt_BR
dc.subject.wosBoronpt_BR
dc.description.abstractSulfur doping of diamond samples produced by the hot-filament chemical vapor deposition (CVD) process using carbon disulfide highly diluted in ethanol and hydrogen has been investigated. The polycrystalline morphology observed by Scanning Electron Microscopy (SEM) and the characteristic diamond Raman peak were practically not affected by addition of CS(2) in the range of 0.8-2.0% by volume. The electrical resistivity dependence due to CS(2) addition showed a "down-and-up" curve with minimum resistivity of about 3.6 x 10(-4) Omega cm. Hall mobility as high as 325.9 cm(2)V(-1)s(-1) have been achieved. PIXE and XRF measurements showed that sulfur (100-400 ppm) was incorporated during the deposition independent of the CS(2) added. Unintentional contaminations with Si, W, Cu and Cr have been detected. All the samples, measured by hot-point method and Hall effect, showed p-type characteristics. (C) 2010 Elsevier Ltd. All rights reserved.pt
dc.relation.ispartofVacuumpt_BR
dc.relation.ispartofabbreviationVacuumpt_BR
dc.publisher.cityOxfordpt_BR
dc.publisher.countryInglaterrapt_BR
dc.publisherPergamon-elsevier Science Ltdpt_BR
dc.date.issued2010pt_BR
dc.date.monthofcirculationAUG 20pt_BR
dc.identifier.citationVacuum. Pergamon-elsevier Science Ltd, v. 85, n. 2, n. 180, n. 183, 2010.pt_BR
dc.language.isoenpt_BR
dc.description.volume85pt_BR
dc.description.issuenumber2pt_BR
dc.description.firstpage180pt_BR
dc.description.lastpage183pt_BR
dc.rightsfechadopt_BR
dc.rights.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policypt_BR
dc.sourceWeb of Sciencept_BR
dc.identifier.issn0042-207Xpt_BR
dc.identifier.wosidWOS:000282548700014pt_BR
dc.identifier.doi10.1016/j.vacuum.2010.05.009pt_BR
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)pt_BR
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)pt_BR
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)pt_BR
dc.description.sponsorship1Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)pt_BR
dc.description.sponsorship1Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)pt_BR
dc.description.sponsorship1Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)pt_BR
dc.date.available2014-11-19T02:05:19Z
dc.date.available2015-11-26T17:56:06Z-
dc.date.accessioned2014-11-19T02:05:19Z
dc.date.accessioned2015-11-26T17:56:06Z-
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dc.description.provenanceMade available in DSpace on 2015-11-26T17:56:06Z (GMT). No. of bitstreams: 2 WOS000282548700014.pdf: 532470 bytes, checksum: 443addc0618ea5b6846e0f34e4b6cfd1 (MD5) WOS000282548700014.pdf.txt: 19085 bytes, checksum: 41343a224b1d763bf81a9d822056a524 (MD5) Previous issue date: 2010en
dc.identifier.urihttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/65455pt_BR
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/65455
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/65455-
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