Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/65453
Type: Artigo de periódico
Title: Electrical isolation of a silicon delta-doped layer in GaAs by ion irradiation
Author: Danilov, I
de Souza, JP
Boudinov, H
Murel, AV
Daniltsev, VM
Shashkin, VI
Abstract: The electrical isolation of a n-type delta-doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation D-th of the delta-doped layer was found to be approximate to 2 times higher than that predicted for thick doped layers of similar carrier concentration. The thermal stability of the isolation, i.e., the persistence of sheet resistance R-s at values > 10(9)Omega/square after subsequent thermal annealing, is limited to temperatures below 400 degrees C. This temperature limit for the thermal stability T-sm is markedly lower than those observed in wider doped layers in which T-sm is congruent to 650 degrees C. A previously isolated delta-doped layer presents p-type conductivity after annealing at temperatures > 600 degrees C . (C) 1999 American Institute of Physics. [S0003-6951(99)03639-6].
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.124870
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

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