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|Type:||Artigo de periódico|
|Title:||Electrical isolation of a silicon delta-doped layer in GaAs by ion irradiation|
de Souza, JP
|Abstract:||The electrical isolation of a n-type delta-doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation D-th of the delta-doped layer was found to be approximate to 2 times higher than that predicted for thick doped layers of similar carrier concentration. The thermal stability of the isolation, i.e., the persistence of sheet resistance R-s at values > 10(9)Omega/square after subsequent thermal annealing, is limited to temperatures below 400 degrees C. This temperature limit for the thermal stability T-sm is markedly lower than those observed in wider doped layers in which T-sm is congruent to 650 degrees C. A previously isolated delta-doped layer presents p-type conductivity after annealing at temperatures > 600 degrees C . (C) 1999 American Institute of Physics. [S0003-6951(99)03639-6].|
|Editor:||Amer Inst Physics|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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