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|Type:||Artigo de periódico|
|Title:||Electrical isolation and transparency in ion-irradiated p-InGaP/GaAs/InGaAs structures|
de Castro, MPP
|Abstract:||He+-ion irradiation was applied for electrical isolation of p-In0.49Ga0.51P in InGaP/GaAs/InGaAs structures. Sheet resistance of approximately 1x10(6) Omega/square was achieved with doses above 1x10(13) cm(-2) at 100 keV. Thermal stability of isolation was maintained for annealing temperatures up to 500 degreesC. Photoluminescence results show that InGaP transparency to InGaAs/GaAs quantum-well emission is closely related to sheet resistance changes in the irradiated structure. (C) 2000 American Institute of Physics. [S0021- 8979(01)02401-X].|
|Editor:||Amer Inst Physics|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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