Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Electrical isolation and transparency in ion-irradiated p-InGaP/GaAs/InGaAs structures
Author: Danilov, I
Pataro, LL
de Castro, MPP
Frateschi, NC
Abstract: He+-ion irradiation was applied for electrical isolation of p-In0.49Ga0.51P in InGaP/GaAs/InGaAs structures. Sheet resistance of approximately 1x10(6) Omega/square was achieved with doses above 1x10(13) cm(-2) at 100 keV. Thermal stability of isolation was maintained for annealing temperatures up to 500 degreesC. Photoluminescence results show that InGaP transparency to InGaAs/GaAs quantum-well emission is closely related to sheet resistance changes in the irradiated structure. (C) 2000 American Institute of Physics. [S0021- 8979(01)02401-X].
Country: EUA
Editor: Amer Inst Physics
Citation: Journal Of Applied Physics. Amer Inst Physics, v. 88, n. 12, n. 7354, n. 7356, 2000.
Rights: aberto
Identifier DOI: 10.1063/1.1326462
Date Issue: 2000
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000165543900062.pdf306.63 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.