Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/65446
Type: Artigo de periódico
Title: Electrical characteristics of Al/a-C:H/n-Si diodes using CH4 and CH4/CF4 as the gas source
Author: Alves, MAR
Braga, ES
Frejlich, J
Cescato, L
Abstract: MIS diodes using as insulator a-C:H films, deposited by PECVD at room temperature with CH4 and CH4/CF4 as gas source were electrically characterized. The film thickness of the a-C:H obtained from CH4/CF4 gas mixture is limited by high intrinsic compressive stress. The I vs V and C vs V diode curves show that films behave as undoped high resistivity layers; their typical resistivities are between 10(10)-10(12) Omega CM and the films also show the presence of slow and deep states. The MIS diodes fabricated using a CH4/CF4 gas mixture source exhibited a significant change in the reverse breakdown voltage.
Country: Inglaterra
Editor: Pergamon-elsevier Science Ltd
Rights: fechado
Identifier DOI: 10.1016/0042-207X(95)00220-0
Date Issue: 1996
Appears in Collections:Unicamp - Artigos e Outros Documentos

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