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|Type:||Artigo de periódico|
|Title:||Electrical characteristics of Al/a-C:H/n-Si diodes using CH4 and CH4/CF4 as the gas source|
|Abstract:||MIS diodes using as insulator a-C:H films, deposited by PECVD at room temperature with CH4 and CH4/CF4 as gas source were electrically characterized. The film thickness of the a-C:H obtained from CH4/CF4 gas mixture is limited by high intrinsic compressive stress. The I vs V and C vs V diode curves show that films behave as undoped high resistivity layers; their typical resistivities are between 10(10)-10(12) Omega CM and the films also show the presence of slow and deep states. The MIS diodes fabricated using a CH4/CF4 gas mixture source exhibited a significant change in the reverse breakdown voltage.|
|Editor:||Pergamon-elsevier Science Ltd|
|Citation:||Vacuum. Pergamon-elsevier Science Ltd, v. 47, n. 3, n. 225, n. 227, 1996.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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