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dc.contributor.CRUESPUniversidade Estadual de Campinaspt_BR
dc.typeArtigo de periódicopt_BR
dc.titleElectrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InPpt_BR
dc.contributor.authorDias, IFLpt_BR
dc.contributor.authorDuarte, JLpt_BR
dc.contributor.authorLaureto, Ept_BR
dc.contributor.authorGelamo, RVpt_BR
dc.contributor.authorMenezes, EApt_BR
dc.contributor.authorHarmand, JCpt_BR
unicamp.authorUniv Estadual Londrina, Dept Fis, BR-86051970 Londrina, Parana, Brazil UNICAMP, Inst Fis Gleb Wataghin, Campinas, SP, Brazil France Telecom, CNET, Bagneux Lab, F-92225 Bagneux, Francept_BR
dc.subjectsemiconductorpt_BR
dc.subjectdigital alloypt_BR
dc.subjectBrag mirrorpt_BR
dc.subject.wosWavelengthpt_BR
dc.description.abstractWe report electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs Bragg mirror lattice matched to InP grown by molecular beam epitaxy, A 98.2% reflectivity with a 107 nm stop band width centred at 1.54 mu m is obtained. An average voltage drop of 16 mV per period at a current density of 1 KA cm(-2) is observed for a mean electron concentration of about 5.5 x 10(18) cm(-3). The influence of structural and intrinsic properties of the heterostructure on the electrical resistivity and optical reflectivity is analysed. (C) 2000 Academic Press.pt
dc.relation.ispartofSuperlattices And Microstructurespt_BR
dc.relation.ispartofabbreviationSuperlattices Microstruct.pt_BR
dc.publisher.cityLondonpt_BR
dc.publisher.countryInglaterrapt_BR
dc.publisherAcademic Press Ltdpt_BR
dc.date.issued2000pt_BR
dc.date.monthofcirculationJULpt_BR
dc.identifier.citationSuperlattices And Microstructures. Academic Press Ltd, v. 28, n. 1, n. 29, n. 33, 2000.pt_BR
dc.language.isoenpt_BR
dc.description.volume28pt_BR
dc.description.issuenumber1pt_BR
dc.description.initialpage29pt_BR
dc.description.lastpage33pt_BR
dc.rightsfechadopt_BR
dc.sourceWeb of Sciencept_BR
dc.identifier.issn0749-6036pt_BR
dc.identifier.wosidWOS:000088722500003pt_BR
dc.identifier.doi10.1006/spmi.2000.0847pt_BR
dc.date.available2014-12-02T16:25:49Z
dc.date.available2015-11-26T16:21:28Z-
dc.date.accessioned2014-12-02T16:25:49Z
dc.date.accessioned2015-11-26T16:21:28Z-
dc.description.provenanceMade available in DSpace on 2014-12-02T16:25:49Z (GMT). No. of bitstreams: 1 WOS000088722500003.pdf: 98815 bytes, checksum: 4e95af1e0eebd4fac0be7c98779f6127 (MD5) Previous issue date: 2000en
dc.description.provenanceMade available in DSpace on 2015-11-26T16:21:28Z (GMT). No. of bitstreams: 2 WOS000088722500003.pdf: 98815 bytes, checksum: 4e95af1e0eebd4fac0be7c98779f6127 (MD5) WOS000088722500003.pdf.txt: 12170 bytes, checksum: 66b520bac6c8570433bd20cf990b0e47 (MD5) Previous issue date: 2000en
dc.identifier.urihttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/65442pt_BR
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/65442
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/65442-
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