Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/65442
Type: Artigo de periódico
Title: Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InP
Author: Dias, IFL
Duarte, JL
Laureto, E
Gelamo, RV
Menezes, EA
Harmand, JC
Abstract: We report electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs Bragg mirror lattice matched to InP grown by molecular beam epitaxy, A 98.2% reflectivity with a 107 nm stop band width centred at 1.54 mu m is obtained. An average voltage drop of 16 mV per period at a current density of 1 KA cm(-2) is observed for a mean electron concentration of about 5.5 x 10(18) cm(-3). The influence of structural and intrinsic properties of the heterostructure on the electrical resistivity and optical reflectivity is analysed. (C) 2000 Academic Press.
Subject: semiconductor
digital alloy
Brag mirror
Country: Inglaterra
Editor: Academic Press Ltd
Rights: fechado
Identifier DOI: 10.1006/spmi.2000.0847
Date Issue: 2000
Appears in Collections:Unicamp - Artigos e Outros Documentos

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