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|Type:||Artigo de periódico|
|Title:||Electrical activation of carbon in GaAs: Implantation temperature effects|
de Souza, JP
|Abstract:||Carbon was implanted into GaAs at the energy of 1 MeV with doses between 1 x 10(13) and 2 x 10(15) cm(-2) at temperatures of 80 K, nominal room temperature (RT), and 300 degreesC. A markedly higher electrical activation was obtained in the samples implanted at 80 K compared to those implanted at RT or 300 degreesC, attaining a maximum hole concentration of 2 x 10(19) cm(-3). The redistribution of the C profile during rapid thermal annealing at temperatures from 700 to 950 degreesC for 10 s was found negligible, independently of the implantation temperature. Similar improvements in the electrical properties were also verified in samples implanted at 80 K with a lower energy of 60 keV. We consider that despite the light mass of C ions, the reduced dynamic annealing at 80 K allows the accumulation of an abundance of As vacancies, which assist the C activation as a p-type dopant. (C) 2001 American Institute of Physics.|
|Editor:||Amer Inst Physics|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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