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|Type:||Artigo de periódico|
|Title:||Elastic and magnetic properties of epitaxial MnAs layers on GaAs|
|Abstract:||We have investigated the elasto- and magneto-optical properties of MnAs layers epitaxially grown on (001) GaAs for temperatures around the structural (hexagonal/orthorhombic) and magnetic (ferromagnetic/paramagnetic) phase transition of MnAs at T(c)similar to40 degreesC. The phase transition is accompanied by a large variation of the MnAs lattice parameter a of similar to1%, which induces a strong and anisotropic strain field in the MnAs/GaAs heterostructures. The latter was measured by detecting the optical anisotropy induced on the GaAs substrate by means of polarization-sensitive light transmission measurements. The experimental results show clear evidence for the quasi-uniaxial strain induced on the GaAs substrate during the phase transition, which extends over a temperature range of similar to30 degreesC in the MnAs/GaAs heterostructures. The strain levels are well reproduced by an elastic model for the heterostructures which assumes that the strain is transferred across the MnAs/GaAs interface without relaxation. The elastic properties during the phase transition were compared to the average magnetization probed using a SQUID magnetometer and to the magnetization near the front and the back surfaces of the MnAs films detected using the magneto-optical Kerr effect. The smaller temperature range of the phase transition observed in the magneto-optical Kerr effect measurements indicates a lower stability of the ferromagnetic phase near the surface of the MnAs layers.|
|Editor:||American Physical Soc|
|Citation:||Physical Review B. American Physical Soc, v. 65, n. 20, 2002.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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