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Type: Artigo de periódico
Title: Neutral dangling bond depletion in amorphous SiN films induced by magnetic rare-earth elements
Author: Sercheli, MS
Rettori, C
Zanatta, AR
Abstract: Amorphous silicon-nitrogen (a-SiN) thin films doped with rare-earth elements (RE = Y, La, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Yb, and Lu) were prepared by cosputtering and studied by means of electron spin resonance. It was found that the neutral dangling bond density, [D-0], of the a-SiN films decreases with the presence of magnetic REs and the drop in [D-0] approximately scales with the de Gennes and/or the spin factor of each RE element. Similar to the decrease in T-c in RE-doped superconductors, our experimental results strongly suggest that an exchange-like interaction, H similar to J(RE.D0)S(RE).S-D0, between the spin of the magnetic REs and that of the D-0 is taking place. (C) 2003 Published by Elsevier Ltd.
Subject: thin films
impurities in semiconductors
order-disorder effects
spin-orbit effects
electron paramagnetic resonance
Country: Inglaterra
Editor: Pergamon-elsevier Science Ltd
Citation: Solid State Communications. Pergamon-elsevier Science Ltd, v. 128, n. 41700, n. 47, n. 50, 2003.
Rights: fechado
Identifier DOI: 10.1016/S0038-1098(03)00654-9
Date Issue: 2003
Appears in Collections:Unicamp - Artigos e Outros Documentos

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