Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/64975
Type: Artigo de periódico
Title: Effects of hydrostatic pressure on the electron g(parallel to) factor and g-factor anisotropy in GaAs-(Ga, Al) As quantum wells under magnetic fields
Author: Porras-Montenegro, N
Duque, CA
Reyes-Gomez, E
Oliveira, LE
Abstract: The hydrostatic-pressure effects on the electron-effective Lande g(parallel to) factor and g-factor anisotropy in semiconductor GaAs-Ga1-xAlxAs quantum wells under magnetic fields are studied. The g(parallel to) factor is computed by considering the non-parabolicity and anisotropy of the conduction band through the Ogg-McCombe effective Hamiltonian, and numerical results are displayed as functions of the applied hydrostatic pressure, magnetic fields, and quantum-well widths. Good agreement between theoretical results and experimental measurements in GaAs-(Ga, Al) As quantum wells for the electron g factor and g-factor anisotropy at low values of the applied magnetic field and in the absence of hydrostatic pressure is obtained. Present results open up new possibilities for manipulating the electron-effective g factor in semiconductor heterostructures.
Country: Inglaterra
Editor: Iop Publishing Ltd
Rights: fechado
Identifier DOI: 10.1088/0953-8984/20/46/465220
Date Issue: 2008
Appears in Collections:Unicamp - Artigos e Outros Documentos

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