Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/64974
Type: Artigo de periódico
Title: Effects of hydrostatic pressure on the Coulomb-bound states in GaAs-Ga1-xAlxAs semiconductor superlattices
Author: Vargas, J
Raigoza, N
Morales, AL
Duque, CA
Reyes-Gomez, E
Abstract: The effects of hydrostatic pressure on the Coulomb-bound states in GaAs-Ga1-xAlxAs and GaAs-AlAs semiconductor superlattices are theoretically studied. Calculations of the impurity binding energies for different configurations of the system and for various values of the hydrostatic pressure are performed in the framework of the parabolic-band and effective-mass schemes, and within the variational procedure. The hydrostatic-pressure dependence on the exciton energy is also obtained, and theoretical results are compared and found in good agreement with available experimental measurements. (C) 2008 Elsevier Ltd. All rights reserved.
Subject: Hydrostatic pressure
Superlattice
Impurity
Exciton
Country: Inglaterra
Editor: Academic Press Ltd- Elsevier Science Ltd
Rights: fechado
Identifier DOI: 10.1016/j.spmi.2008.09.009
Date Issue: 2008
Appears in Collections:Unicamp - Artigos e Outros Documentos

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