Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/64973
Type: Artigo de periódico
Title: Effects of hydrostatic pressure and applied electric fields on the exciton states in GaAs-(Ga,Al)As quantum wells
Author: Raigoza, N
Duque, CA
Reyes-Gomez, E
Oliveira, LE
Abstract: The effects of both hydrostatic pressure and electric fields applied perpendicular to the layers on the direct-exciton states in single GaAs-(Ga,AI)As quantum wells are studied. Theoretical calculations are performed within the variational procedure, in the framework of the effective-mass and non-degenerate parabolic-band approximations. Both heavy- and light-hole exciton energies and corresponding quantum-confined Bohr radii are obtained. The pressure coefficient is also theoretically evaluated and found in good agreement with available experimental measurements. (c) 2005 Elsevier B.V. All rights reserved.
Subject: exciton states
quantum wells
GaAs-(Ga,Al)As
Country: Holanda
Editor: Elsevier Science Bv
Rights: fechado
Identifier DOI: 10.1016/j.physb.2005.06.027
Date Issue: 2005
Appears in Collections:Unicamp - Artigos e Outros Documentos

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