Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/64972
Type: Artigo de periódico
Title: Effects of hydrostatic pressure and aluminum concentration on the conduction-electron g factor in GaAs-(Ga,Al) As quantum wells under in-plane magnetic fields
Author: Reyes-Gomez, E
Raigoza, N
Oliveira, LE
Abstract: The effects of hydrostatic pressure and aluminum concentration on the conduction-electron effective Lande g factor in semiconductor GaAs-Ga1-xAlxAs quantum wells under in-plane magnetic fields are presented. Numerical calculations of the conduction-electron Lande g factor are performed by taking into account the nonparabolicity and anisotropy of the conduction band via the Ogg-McCombe Hamiltonian as well as the effects of aluminum concentration and applied hydrostatic pressure. Theoretical results are given as functions of the aluminum concentration in the Ga1-xAlxAs barrier, orbit-center position, applied in-plane magnetic field, hydrostatic pressure, and quantum-well width, and found in good agreement with experimental measurements in GaAs-Ga1-xAlxAs quantum wells for various values of the aluminum concentration x in the absence of hydrostatic pressure.
Country: EUA
Editor: Amer Physical Soc
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.77.115308
Date Issue: 2008
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000254542800104.pdf181.13 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.