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|Type:||Artigo de periódico|
|Title:||Environment of Erbium in a-Si : H and a-SiOx : H|
|Abstract:||The chemical environment of Er in a-Si:H and a-SiOx:H was determined by extended x-ray absorption fine structure. Only one family of Er sites is found, coordinated on average with two to three O atoms (compared to six in Er2O3). We devised a new model for the incorporation of Er in a-Si:II and a-SiOx:H. According to the model, Er is incorporated in the form of [ErOdelta](+3-2 delta) complexes, with delta less than or equal to 3. The minimum configuration energy is achieved for delta = 3 when the valence requirements of Er are fulfilled. The complexes are low symmetry environments that allow the Er3+ luminescent transition at 1.54 mu m and make Er an acceptor in a-Si:H whereas it is donor in crystalline silicon. [S0031-9007(98)07668-6].|
|Editor:||American Physical Soc|
|Citation:||Physical Review Letters. American Physical Soc, v. 81, n. 21, n. 4652, n. 4655, 1998.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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