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Type: Artigo de periódico
Title: Environment of Erbium in a-Si : H and a-SiOx : H
Author: Piamonteze, C
Iniguez, AC
Tessler, LR
Alves, MCM
Tolentino, H
Abstract: The chemical environment of Er in a-Si:H and a-SiOx:H was determined by extended x-ray absorption fine structure. Only one family of Er sites is found, coordinated on average with two to three O atoms (compared to six in Er2O3). We devised a new model for the incorporation of Er in a-Si:II and a-SiOx:H. According to the model, Er is incorporated in the form of [ErOdelta](+3-2 delta) complexes, with delta less than or equal to 3. The minimum configuration energy is achieved for delta = 3 when the valence requirements of Er are fulfilled. The complexes are low symmetry environments that allow the Er3+ luminescent transition at 1.54 mu m and make Er an acceptor in a-Si:H whereas it is donor in crystalline silicon. [S0031-9007(98)07668-6].
Country: EUA
Editor: American Physical Soc
Citation: Physical Review Letters. American Physical Soc, v. 81, n. 21, n. 4652, n. 4655, 1998.
Rights: aberto
Identifier DOI: 10.1103/PhysRevLett.81.4652
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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