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|Type:||Artigo de periódico|
|Title:||Environment of Er in a-Si : H: Co-sputtering versus ion implantation|
|Abstract:||We report a comparative Extended X-Ray Fine Structure (EXAFS) study of Er in a-Si:H prepared by Er implantation in a-Si:H and by co-sputtering undergoing the same cumulative annealing processes. It mas found that the Er environment in as-implanted samples is formed by Si atoms, which are replaced by oxygen under annealing. In the co-sputtered samples, the initial low coordination oxygen environment evolves under thermal treatment to an Er2O3-like neighborhood.|
|Editor:||Sociedade Brasileira Fisica|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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