Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/64912
Type: Artigo de periódico
Title: Environment of Er in a-Si : H: Co-sputtering versus ion implantation
Author: Piamonteze, C
Tessler, LR
Alves, MCM
Tolentino, H
Abstract: We report a comparative Extended X-Ray Fine Structure (EXAFS) study of Er in a-Si:H prepared by Er implantation in a-Si:H and by co-sputtering undergoing the same cumulative annealing processes. It mas found that the Er environment in as-implanted samples is formed by Si atoms, which are replaced by oxygen under annealing. In the co-sputtered samples, the initial low coordination oxygen environment evolves under thermal treatment to an Er2O3-like neighborhood.
Country: Brasil
Editor: Sociedade Brasileira Fisica
Rights: fechado
Identifier DOI: 10.1590/S0103-97331999000400029
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

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