Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/64845
Type: Artigo de periódico
Title: Enhanced side-mode suppression in chaotic stadium microcavity lasers
Author: Mestanza, SNM
Von Zuben, AA
Frateschi, NC
Abstract: We report an enhanced side-mode suppression in Bunimovich stadium lasers with strained InGaAs/InGaP quantum well (QW) active regions. This is realized with spatially selective carrier injection along a particular periodic orbit of the stadium. The selectivity is achieved using He(+3) ion implantation. Up to 21 dB enhancement in side-mode suppression is observed for a 40x20 mu m(2) stadium with interband transition between the first excited quantum well level. The improvement in side-mode suppression is apparently a consequence of coherent beating between orbits leading to a Vernier effect. A simple model corroborate with this hypothesis.
Subject: gallium arsenide
indium compounds
ion implantation
microcavity lasers
semiconductor lasers
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.3082479
Date Issue: 2009
Appears in Collections:Unicamp - Artigos e Outros Documentos

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