Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/64545
Type: Artigo de periódico
Title: Electronic structure of holes in modulation doped p-Si1-xGex/Si strained quantum wells in a magnetic field
Author: Rego, LGC
Hawrylak, P
Brum, JA
Abstract: The results of self-consistent calculations of hole energy levels in strained, symmetric and asymmetric, p-type modulation doped Si1-xGex/Si quantum wells in a magnetic field are reported. The band mixing is responsible for the enhanced effective g-factor of the opposite parity states. This leads to gaps at predominantly odd filling factors. The calculated filling factor dependent energy gaps are compared with gaps obtained from magneto-transport measurements. (C) 1997 Published by Elsevier Science Ltd.
Subject: quantum-wells
electronic states
quantum Hall effect
Country: Inglaterra
Editor: Pergamon-elsevier Science Ltd
Rights: fechado
Identifier DOI: 10.1016/S0038-1098(97)00355-4
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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