Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Electronic structure of donor-impurity complexes in GaAs/Ga1-xAlxAs quantum wells|
|Abstract:||The ground state of the two-electron donor-impurity complexes D- and D-2(0) confined in a quantum well is analysed by using a variational procedure. A model approximation that can be used in the two-electron problem in order to separate the variables is proposed, and it is shown that, for the D- negative ion and the D-2(0) complex, the electron-electron interaction may be eliminated, in this approximation, by introducing an additional effective charge at a centre of symmetry. The D- binding energy is calculated as a function of the GaAs/Ga1-xAlxAs quantum-well width for different magnetic field strength values, whereas the D-2(+) and D-2(0) dissociation energies are calculated as functions of the spacing between the impurities in the complexes, and for different well widths. The results for the first (D-2(0) --> D-2(+) + e) and the second (D-2(+) --> D+D+ + e) ionization binding energies as functions of the well width are presented for different separations between impurities. Finally, the scheme that we propose is extremely simple and provides a realistic description of few-particle ground-state electronic structures confined in a quantum well.|
|Editor:||Iop Publishing Ltd|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.