Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/64544
Type: Artigo de periódico
Title: Electronic structure of donor-impurity complexes in GaAs/Ga1-xAlxAs quantum wells
Author: Betancur, FJ
Mikhailov, ID
Marin, JH
Oliveira, LE
Abstract: The ground state of the two-electron donor-impurity complexes D- and D-2(0) confined in a quantum well is analysed by using a variational procedure. A model approximation that can be used in the two-electron problem in order to separate the variables is proposed, and it is shown that, for the D- negative ion and the D-2(0) complex, the electron-electron interaction may be eliminated, in this approximation, by introducing an additional effective charge at a centre of symmetry. The D- binding energy is calculated as a function of the GaAs/Ga1-xAlxAs quantum-well width for different magnetic field strength values, whereas the D-2(+) and D-2(0) dissociation energies are calculated as functions of the spacing between the impurities in the complexes, and for different well widths. The results for the first (D-2(0) --> D-2(+) + e) and the second (D-2(+) --> D+D+ + e) ionization binding energies as functions of the well width are presented for different separations between impurities. Finally, the scheme that we propose is extremely simple and provides a realistic description of few-particle ground-state electronic structures confined in a quantum well.
Country: Inglaterra
Editor: Iop Publishing Ltd
Rights: fechado
Identifier DOI: 10.1088/0953-8984/10/32/019
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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