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|Type:||Artigo de periódico|
|Title:||Electronic structure at InP organic polymer layer interfaces|
|Abstract:||Organic polymer layer/p-InP(100) interfaces have been investigated using surface photovoltage spectroscopy (SPS) in conjunction with ultraviolet-visible absorption spectroscopy (AS), infrared transmission spectroscopy (IRTS), time-resolved photoluminescence (PL), and x-ray photoemission spectroscopy (XPS). Prior to deposition, the etched p-InP(100) surfaces exhibited two gap states, attributed to excess surface P and adsorbed O, respectively. Postdeposition measurements show that N-containing layers suppress the former state at the interface, while the latter state is suppressed if S and F are present in the organic polymer film. A mechanism of these interfacial phenomena is suggested. (C) 1997 American Institute of Physics.|
|Editor:||Amer Inst Physics|
|Citation:||Applied Physics Letters. Amer Inst Physics, v. 70, n. 22, n. 3011, n. 3013, 1997.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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