Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/64513
Type: Artigo de periódico
Title: Electronic and structural properties of implanted xenon in amorphous silicon
Author: Barbieri, PF
Landers, R
Marques, FC
Abstract: The electronic and structural characteristics of xenon implanted in amorphous silicon are investigated. A different implantation approach, in which xenon atoms are implanted during the film deposition, was developed. Up to about 5 at. % of xenon were implanted at energy as low as 100 eV. X-ray absorption spectroscopy reveals that xenon atoms are dispersed in the amorphous Si network. The xenon 3d(5/2) binding energy, from x-ray photoelectron spectroscopy, as well as the initial state contribution and relaxation energy, from x-ray excited Auger electron spectroscopy, depend on the implantation energy and indicate that the xenon atoms are trapped in voids of different sizes. (C) 2007 American Institute of Physics.
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.2723072
Date Issue: 2007
Appears in Collections:Unicamp - Artigos e Outros Documentos

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