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|Type:||Artigo de periódico|
|Title:||Electronic and structural properties of implanted xenon in amorphous silicon|
|Abstract:||The electronic and structural characteristics of xenon implanted in amorphous silicon are investigated. A different implantation approach, in which xenon atoms are implanted during the film deposition, was developed. Up to about 5 at. % of xenon were implanted at energy as low as 100 eV. X-ray absorption spectroscopy reveals that xenon atoms are dispersed in the amorphous Si network. The xenon 3d(5/2) binding energy, from x-ray photoelectron spectroscopy, as well as the initial state contribution and relaxation energy, from x-ray excited Auger electron spectroscopy, depend on the implantation energy and indicate that the xenon atoms are trapped in voids of different sizes. (C) 2007 American Institute of Physics.|
|Editor:||Amer Inst Physics|
|Citation:||Applied Physics Letters. Amer Inst Physics, v. 90, n. 16, 2007.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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