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|Type:||Artigo de periódico|
|Title:||Electron spin resonance g shift in Gd5Si4, Gd5Ge4, and Gd5.09Ge2.03Si1.88|
da Silva, EC
|Abstract:||Gd5Si4, Gd5Ge4, and Gd5.09Ge2.03Si1.88 compounds were studied by electron spin resonance. The arc-melted samples were initially characterized by optical metallography, x-ray diffraction, and static magnetization measurements. The electron spin resonance results show a negative paramagnetic g shift for Gd5Si4 and Gd5.09Ge2.03Si1.88, and a smaller positive one for Gd5Ge4. The values of the exchange parameter (j) between the localized Gd-4f spins and the conduction electrons are obtained from the g shifts. These values are positive and of the same order of magnitude for Gd5Si4 and Gd5.09Ge2.03Si1.88, and negative one order of magnitude smaller for Gd5Ge4. The electron spin resonance data were interpreted considering the strongly bottlenecked solution of the coupled Bloch-Hasegawa equations.|
|Editor:||American Physical Soc|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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