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Type: Artigo de periódico
Title: Electron Lande g(parallel to) factor in semiconductor quantum wires
Author: Lopez, FE
Reyes-Gomez, E
Oliveira, LE
Abstract: The properties of the conduction-electron g(parallel to) factor in semiconductor GaAs-Ga(1-x)Al(x)As quantum-well wires under magnetic fields applied along the wire axis are presented. The electron g(parallel to) factor is obtained as a function of both the applied magnetic field and transversal area of the wire. Calculations are performed by taking into account the non-parabolicity and anisotropy of the conduction band via the Ogg-McCombe Hamiltonian for both cylindrical and rectangular quantum-well wires. The conduction-electron Lande factor is shown to be a growing function of the applied magnetic field as well as dependent on the shape of the transversal section of the wire. (C) 2008 Elsevier Ltd. All rights reserved.
Subject: Electron Lande factor
Quantum-well wire
Magnetic field
Country: Inglaterra
Editor: Elsevier Sci Ltd
Citation: Microelectronics Journal. Elsevier Sci Ltd, v. 39, n. 11, n. 1272, n. 1273, 2008.
Rights: fechado
Identifier DOI: 10.1016/j.mejo.2008.01.030
Date Issue: 2008
Appears in Collections:Unicamp - Artigos e Outros Documentos

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