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|Type:||Artigo de periódico|
|Title:||Electron Lande g(parallel to) factor in semiconductor quantum wires|
|Abstract:||The properties of the conduction-electron g(parallel to) factor in semiconductor GaAs-Ga(1-x)Al(x)As quantum-well wires under magnetic fields applied along the wire axis are presented. The electron g(parallel to) factor is obtained as a function of both the applied magnetic field and transversal area of the wire. Calculations are performed by taking into account the non-parabolicity and anisotropy of the conduction band via the Ogg-McCombe Hamiltonian for both cylindrical and rectangular quantum-well wires. The conduction-electron Lande factor is shown to be a growing function of the applied magnetic field as well as dependent on the shape of the transversal section of the wire. (C) 2008 Elsevier Ltd. All rights reserved.|
|Subject:||Electron Lande factor|
|Editor:||Elsevier Sci Ltd|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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